| Фотографии | Производитель. Часть # | Доступность | Цены | Количество | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
                 
                   
                
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                    NP110N055PUJ-E1B-AYNP110N055PUJ-E1B-AY - SWITCHINGN  |  
                1,000 | 5.51 | 
                
                    
                    RFQ | 
               
                   Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 2.4mOhm @ 55A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 14250 pF @ 25 V | - | 1.8W (Ta), 288W (Tc) | 175°C | Surface Mount | |
                 
                   
                
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                    P3M06040K3SICFET N-CH 650V 68A TO247-3  |  
                1,002 | 12.17 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 68A | 15V | 50mOhm @ 40A, 15V | 2.4V @ 7.5mA (Typ) | - | +20V, -8V | - | - | 254W | -55°C ~ 175°C (TJ) | Through Hole | 
                 
                   
                
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                    P3M171K0G7SICFET N-CH 1700V 7A TO-263-7  |  
                5,234 | 6.10 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 7A | 15V | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | - | +19V, -8V | - | - | 100W | -55°C ~ 175°C (TJ) | Surface Mount | 
                 
                   
                
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                    FCH041N65EFL4POWER FIELD-EFFECT TRANSISTOR, N  |  
                7,201 | 7.45 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Bulk | FRFET®, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 7.6mA | 298 nC @ 10 V | ±20V | 12560 pF @ 100 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                 
                   
                
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                    UJ4C075060B7S750V/60MOHM, N-OFF SIC CASCODE  |  
                4,600 | 50.00 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | SiCFET (Silicon Carbide) | 750 V | 25.8A (Tc) | 12V | 74mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1420 pF @ 400 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | |
                 
                   
                
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                    FCH041N65F-F085MOSFET N-CH 650V 76A TO247-3  |  
                5,304 | 9.24 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Bulk | Automotive, AEC-Q101, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 250µA | 304 nC @ 10 V | ±20V | 13566 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                 
                   
                
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                    UJ4C075033B7S750V/33MOHM, N-OFF SIC CASCODE  |  
                2,992 | 50.00 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | SiCFET (Silicon Carbide) | 750 V | 44A (Tc) | 12V | 41mOhm @ 30A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | |
                 
                   
                
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                    P3M12040K3SICFET N-CH 1200V 63A TO-247-3  |  
                4,162 | 20.98 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A | 15V | 48mOhm @ 40A, 15V | 2.2V @ 40mA (Typ) | - | +21V, -8V | - | - | 349W | -55°C ~ 175°C (TJ) | Through Hole | 
                 
                   
                
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                    IRF350MOSFET N-CH 400V 14A TO3  |  
                2,834 | 23.19 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 14A (Tc) | 10V | 400mOhm @ 14A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2600 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                 
                   
                
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                    P3M12025K4SICFET N-CH 1200V 112A TO-247-4  |  
                4,686 | 28.74 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 112A | 15V | 35mOhm @ 50A, 15V | 2.2V @ 50mA (Typ) | - | +19V, -8V | - | - | 577W | -55°C ~ 175°C (TJ) | Through Hole | 
                 
                   
                
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                    P3M07013K4SICFET N-CH 750V 140A TO-247-4  |  
                1,928 | 33.90 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 140A | 15V | 16mOhm @ 75A, 15V | 2.2V @ 75mA (Typ) | - | +19V, -8V | - | - | 428W | -55°C ~ 175°C (TJ) | Through Hole | 
                 
                   
                
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                    P3M17040K4SICFET N-CH 1700V 73A TO-247-4  |  
                2,580 | 35.86 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 73A | 15V | 60mOhm @ 50A, 15V | 2.2V @ 50mA (Typ) | - | +19V, -8V | - | - | 536W | -55°C ~ 175°C (TJ) | Through Hole | 
                 
                   
                
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                    IV1Q12050T3SIC MOSFET, 1200V 50MOHM, TO-247  |  
                2,119 | 39.28 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 65mOhm @ 20A, 20V | 3.2V @ 6mA | 120 nC @ 20 V | +20V, -5V | 2770 pF @ 800 V | - | 327W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                 
                   
                
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                    UJ4SC075009B7S750V/9MOHM, N-OFF SIC STACK CASC  |  
                1,857 | 41.61 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 106A (Tc) | 12V | 11.5mOhm @ 70A, 12V | 5.5V @ 10mA | 75 nC @ 15 V | ±20V | 3340 pF @ 400 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
                 
                   
                
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                    6BP16-26BP16 - 16 CHAN BP W RS-232  |  
                450 | 488.16 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 
                 
                   
                
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                    EPC8002GANFET N-CH 65V 2A DIE  |  
                9,917 | 3.26 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 65 V | 2A (Ta) | 5V | 530mOhm @ 500mA, 5V | 2.5V @ 250µA | - | +6V, -4V | 21 pF @ 32.5 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | 
                 
                   
                
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                    EPC2059TRANS GAN 170V DIE .009OHM  |  
                8,672 | 3.61 | 
                
                    
                    RFQ | 
               
                   Tape & Reel (TR),Cut Tape (CT) | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
                 
                   
                
                 | 
				
                    EPC2066TRANSISTOR GAN 40V .001OHM  |  
                8,609 | 6.54 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 40 V | 90A (Ta) | 5V | 1.1mOhm @ 50A, 5V | 2.5V @ 28mA | 33 nC @ 5 V | +6V, -4V | 4523 pF @ 20 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | 
                 
                   
                
                 | 
				
                    SCT2H12NYTBSICFET N-CH 1700V 4A TO268  |  
                7,031 | 6.96 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 4A (Tc) | 18V | 1.5Ohm @ 1.1A, 18V | 4V @ 410µA | 14 nC @ 18 V | +22V, -6V | 184 pF @ 800 V | - | 44W (Tc) | 175°C (TJ) | Surface Mount | 
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                   | 
				
                    EPC2302TRANS GAN 100V DIE .0019OHM  |  
                9,330 | 7.15 | 
                
                    
                    RFQ | 
               
                
                  
                    
                 
                     Datasheet  | 
				 
                Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 101A (Ta) | 5V | 1.8mOhm @ 50A, 5V | 2.5V @ 14mA | 23 nC @ 5 V | +6V, -4V | 3200 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |