Фотографии | Производитель. Часть # | Доступность | Цены | Количество | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFR540ZTRLPBFMOSFET N-CH 100V 35A DPAK |
5,622 | 1.35 |
RFQ |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | 4V @ 50µA | 59 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPA50R299CPXKSA1079IPA50R299 - 500V COOLMOS N-CHANN |
13,273 | 0.88 |
RFQ |
![]() Datasheet |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 31 nC @ 10 V | ±20V | 1190 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AUIRFU8403MOSFET N-CH 40V 100A I-PAK |
10,308 | 0.89 |
RFQ |
![]() Datasheet |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | 3.9V @ 100µA | 99 nC @ 10 V | ±20V | 3171 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPI147N12N3GIPI147N12 - 12V-300V N-CHANNEL P |
11,721 | 0.90 |
RFQ |
![]() Datasheet |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 56A (Ta) | 10V | 14.7mOhm @ 56A, 10V | 4V @ 61µA | 49 nC @ 10 V | ±20V | 3220 pF @ 60 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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ISC036N04NM5ATMA140V 3.6M OPTIMOS MOSFET SUPERSO8 |
8,558 | 1.40 |
RFQ |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™-5 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 21A (Ta), 98A (Tc) | 7V, 10V | 3.6mOhm @ 49A, 10V | 3.4V @ 23µA | 28 nC @ 10 V | ±20V | 2000 pF @ 20 V | - | 3W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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UPA2730TP-E2-AZUPA2730 - POWER FIELD-EFFECT TRA |
25,000 | 0.91 |
RFQ |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 42A (Tc) | 4V, 10V | 7mOhm @ 7.5A, 10V | 2.5V @ 1mA | 97 nC @ 10 V | ±20V | 4670 pF @ 10 V | - | 3W (Ta), 40W (Tc) | 150°C | Surface Mount | |
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FCP380N60EMOSFET N-CH 600V 10.2A TO220-3 |
12,683 | 0.92 |
RFQ |
![]() Datasheet |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 45 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF7483MTRPBFMOSFET N-CH 40V 135A DIRECTFET |
13,250 | 0.92 |
RFQ |
![]() Datasheet |
Bulk | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 135A (Tc) | 6V, 10V | 2.3mOhm @ 81A, 10V | 3.9V @ 100µA | 81 nC @ 10 V | ±20V | 3913 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD60R600E6MOSFET N-CH 600V 7.3A TO252-3 |
5,925 | 1.42 |
RFQ |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRF6714MTRPBFMOSFET N-CH 25V 29A/166A DIRECT |
13,205 | 0.93 |
RFQ |
![]() Datasheet |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 29A (Ta), 166A (Tc) | 4.5V, 10V | 2.1mOhm @ 29A, 10V | 2.4V @ 100µA | 44 nC @ 4.5 V | ±20V | 3890 pF @ 13 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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BUK7508-55A,127NEXPERIA BUK7508-55A - 75A, 55V |
422 | 10658.00 |
RFQ |
![]() Datasheet |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Ta) | - | 8mOhm @ 25A, 10V | 4V @ 1mA | 76 nC @ 0 V | ±20V | 4352 pF @ 25 V | - | 254W (Ta) | -55°C ~ 175°C (TJ) | |
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PJQ5427_R2_0000130V P-CHANNEL ENHANCEMENT MODE M |
8,950 | 1.43 |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta), 100A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | 2.5V @ 250µA | 68 nC @ 4.5 V | ±20V | 8593 pF @ 15 V | - | 2W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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FCPF380N65FL1MOSFET N-CH 650V 10.2A TO220F |
11,273 | 0.94 |
RFQ |
![]() Datasheet |
Bulk | FRFET®, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.2A (Tc) | 10V | 380mOhm @ 5.1A, 10V | 5V @ 1mA | 43 nC @ 10 V | ±20V | 1680 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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2SJ529L06-E2SJ529L06 - P-CHANNEL POWER MOSF |
60,244 | 0.94 |
RFQ |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 10A (Ta) | 4V, 10V | 160mOhm @ 5A, 10V | 2V @ 1mA | - | ±20V | 580 pF @ 10 V | - | 20W (Tc) | 150°C | Through Hole | |
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BSC196N10NSGATMA1MOSFET N-CH 100V 8.5A/45A TDSON |
6,975 | 1.46 |
RFQ |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.5A (Ta), 45A (Tc) | 10V | 19.6mOhm @ 45A, 10V | 4V @ 42µA | 34 nC @ 10 V | ±20V | 2300 pF @ 50 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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PSMN9R5-100PS,127NEXPERIA PSMN9R5-100PS - 89A, 10 |
11,750 | 0.97 |
RFQ |
![]() Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPD03N03LA GMOSFET N-CH 25V 90A TO252-3 |
1,047 | 1.49 |
RFQ |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 90A (Tc) | 4.5V, 10V | 3.2mOhm @ 60A, 10V | 2V @ 70µA | 41 nC @ 5 V | ±20V | 5200 pF @ 15 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BSC0901NSATMA1MOSFET N-CH 30V 28A/100A TDSON |
8,025 | 1.50 |
RFQ |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 30A, 10V | 2.2V @ 250µA | 44 nC @ 10 V | ±20V | 2800 pF @ 15 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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RJK6011DP3-A0#J2RJK6011DP3-A0#J2 - SILICON NCH S |
45,000 | 0.99 |
RFQ |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 100mA | - | - | - | - | - | - | - | - | - | Surface Mount | |
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AUIRF1010ZMOSFET N-CH 55V 75A TO220AB |
14,931 | 0.99 |
RFQ |
![]() Datasheet |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | - | 7.5mOhm @ 75A, 10V | 4V @ 250µA | 95 nC @ 10 V | - | 2840 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |