Фотографии | Производитель. Часть # | Доступность | Цены | Количество | Таблицы данных | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPG20N06S2L-35AATMA1N-CHANNEL POWER MOSFET |
5,701 | 1.00 |
RFQ |
![]() Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
![]() |
BUK7E8R3-40E12775A, 40V, 0.0074OHM, N CHANNEL |
10,679 | 0.00 |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
FDD6N50RTF6A, 500V, N-CHANNEL, MOSFET |
5,504 | 1.00 |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
FDMC8298N-CHANNEL POWER TRENCH MOSFET |
5,416 | 1.00 |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | |
![]() |
FDD9407N CHANNEL POWER TRENCH MOSFET |
13,287 | 0.00 |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
IRF120CECCPFET, 9.2A I(D), 100V, 0.27OHM |
14,399 | 0.00 |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
FQT1N60CTFMOSFET N-CH 600V 0.2A SOT-223-4 |
5,572 | 1.00 |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
RFP40N10S500140A, 100V, 0.04OHM, N CHANNEL, M |
6,612 | 1.00 |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
SP8M31HZGTB60V DUAL NCH+PCH AUTOMOTIVE POWE |
6,344 | 2.36 |
RFQ |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N and P-Channel | Standard | 60V | 4.5A (Ta) | 65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V | 3V @ 1mA | 7nC @ 5V, 40nC @ 10V | 500pF @ 10V, 2500pF @ 10V | 2W (Ta) | 150°C (TJ) | Surface Mount |
![]() |
EPC2110ENGRTGAN TRANS 2N-CH 120V BUMPED DIE |
6,883 | 2.37 |
RFQ |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | - | -40°C ~ 150°C (TJ) | Surface Mount |
![]() |
SCH1306-TL-EP-CHANNEL SILICON MOSFET |
5,385 | 1.00 |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
MCH3360-TL-EP-CHANNEL SILICON MOSFET |
6,278 | 1.00 |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
IRF540RP228A, 100V, 0.077 OHM, N-CHANNEL |
5,235 | 1.00 |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
FDN5632NN CHANNEL LOGIC LEVEL POWERTRENC |
7,340 | 1.00 |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
BUK762R0-40CPFET, 276A I(D), 40V, 0.00375OHM |
5,998 | 1.00 |
RFQ |
![]() Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
![]() |
ISL85402IRZ-TT7AISL85402 - 2.5A REGULATOR WITH I |
7,970 | 1.00 |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
HAF1002-90L15A, 60V, P-CHANNEL MOSFET |
6,855 | 1.00 |
RFQ |
![]() Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
![]() |
FDS9431P CHANNEL 2.5V SPECIFIED MOSFET |
5,366 | 1.00 |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
FDP2710_SN001681-ELEMENT, N-CHANNEL |
6,266 | 1.00 |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
NVD6828NLT4G8A, 90V, 0.031OHM, N-CHANNEL, M |
5,232 | 1.00 |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |