Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Фотографии Производитель. Часть # Доступность Цены Количество Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
CRSH2-6 BK

CRSH2-6 BK

DIODE SCHOTTKY DO15

Central Semiconductor Corp

11,960 0.00
- +

RFQ

CRSH2-6 BK

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 170pF @ 4V, 1MHz - 500 µA @ 60 V 60 V 2A -65°C ~ 125°C 700 mV @ 2 A
SFA808GHC0G

SFA808GHC0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

10,509 0.00
- +

RFQ

SFA808GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 8A -55°C ~ 150°C 1.7 V @ 8 A
1N4001 BK

1N4001 BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

11,667 0.00
- +

RFQ

1N4001 BK

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 5 µA @ 50 V 50 V 1A -65°C ~ 175°C 1.1 V @ 1 A
SFAF1001G C0G

SFAF1001G C0G

DIODE GEN PURP 50V 10A ITO220AC

Taiwan Semiconductor Corporation

11,808 0.00
- +

RFQ

SFAF1001G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 975 mV @ 10 A
1N4001G BK

1N4001G BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

14,038 0.00
- +

RFQ

1N4001G BK

Datasheet

Bulk RoHS - - Obsolete Through Hole - - - - - - -
SFAF1001GHC0G

SFAF1001GHC0G

DIODE GEN PURP 50V 10A ITO220AC

Taiwan Semiconductor Corporation

14,766 0.00
- +

RFQ

SFAF1001GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 975 mV @ 10 A
1N4002 BK

1N4002 BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

11,717 0.00
- +

RFQ

1N4002 BK

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 5 µA @ 100 V 100 V 1A -65°C ~ 175°C 1.1 V @ 1 A
1N4002G BK

1N4002G BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

14,290 0.00
- +

RFQ

1N4002G BK

Datasheet

Bulk RoHS - - Obsolete Through Hole - - - - - - -
1N4003 BK

1N4003 BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

11,298 0.00
- +

RFQ

1N4003 BK

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 5 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.1 V @ 1 A
1N4003G BK

1N4003G BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

13,619 0.00
- +

RFQ

1N4003G BK

Datasheet

Bulk RoHS - - Obsolete Through Hole - - - - - - -
UF1MHB0G

UF1MHB0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

14,202 0.00
- +

RFQ

UF1MHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
1N4004G BK

1N4004G BK

DIODE GEN PURP 400V 1A DO41

Central Semiconductor Corp

10,154 0.00
- +

RFQ

1N4004G BK

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 2 µs 50 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
UF4001 B0G

UF4001 B0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

13,164 0.00
- +

RFQ

UF4001 B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
1N4005 BK

1N4005 BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

10,360 0.00
- +

RFQ

1N4005 BK

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
UF4001HB0G

UF4001HB0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

12,306 0.00
- +

RFQ

UF4001HB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
1N4005G BK

1N4005G BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

10,450 0.00
- +

RFQ

1N4005G BK

Datasheet

Bulk RoHS - - Obsolete Through Hole - - - - - - -
1N4006G BK

1N4006G BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

10,334 0.00
- +

RFQ

1N4006G BK

Datasheet

Bulk RoHS - - Obsolete Through Hole - - - - - - -
UF4002 B0G

UF4002 B0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

10,321 0.00
- +

RFQ

UF4002 B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
1N4004SP AP-RPCU

1N4004SP AP-RPCU

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

10,601 0.00
- +

RFQ

Tape & Box (TB) RoHS - - Obsolete - - - - - - - -
UF4002HB0G

UF4002HB0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

12,043 0.00
- +

RFQ

UF4002HB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
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