Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Фотографии Производитель. Часть # Доступность Цены Количество Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SR310HA0G

SR310HA0G

DIODE SCHOTTKY 100V 3A DO201AD

Taiwan Semiconductor Corporation

12,102 0.00
- +

RFQ

SR310HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 3A -55°C ~ 150°C 850 mV @ 3 A
S1AL MHG

S1AL MHG

DIODE GEN PURP 50V 1A SUB SMA

Taiwan Semiconductor Corporation

11,745 0.00
- +

RFQ

S1AL MHG

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 50 V 50 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF28GHB0G

SF28GHB0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

12,417 0.00
- +

RFQ

SF28GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
MUR840HC0G

MUR840HC0G

DIODE GEN PURP 400V 8A TO220AC

Taiwan Semiconductor Corporation

11,851 0.00
- +

RFQ

MUR840HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 5 µA @ 400 V 400 V 8A -55°C ~ 175°C 1.3 V @ 8 A
SS25LHM2G

SS25LHM2G

DIODE SCHOTTKY 50V 2A SUB SMA

Taiwan Semiconductor Corporation

12,006 0.00
- +

RFQ

SS25LHM2G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 50 V 50 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR106HA0G

SR106HA0G

DIODE SCHOTTKY 60V 1A DO204AL

Taiwan Semiconductor Corporation

14,476 0.00
- +

RFQ

SR106HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 1A -55°C ~ 150°C 700 mV @ 1 A
SR315HA0G

SR315HA0G

DIODE SCHOTTKY 150V 3A DO201AD

Taiwan Semiconductor Corporation

11,363 0.00
- +

RFQ

SR315HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 3A -55°C ~ 150°C 850 mV @ 3 A
S1ALHM2G

S1ALHM2G

DIODE GEN PURP 50V 1A SUB SMA

Taiwan Semiconductor Corporation

13,388 0.00
- +

RFQ

S1ALHM2G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 50 V 50 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF2L4G B0G

SF2L4G B0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

12,851 0.00
- +

RFQ

SF2L4G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 1 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
MUR860HC0G

MUR860HC0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

14,091 0.00
- +

RFQ

MUR860HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 50 ns 5 µA @ 600 V 600 V 8A -55°C ~ 175°C 1.7 V @ 8 A
SS25LHMHG

SS25LHMHG

DIODE SCHOTTKY 50V 2A SUB SMA

Taiwan Semiconductor Corporation

11,901 0.00
- +

RFQ

SS25LHMHG

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 50 V 50 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR109 A0G

SR109 A0G

DIODE SCHOTTKY 90V 1A DO204AL

Taiwan Semiconductor Corporation

12,233 0.00
- +

RFQ

SR109 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 1A -55°C ~ 150°C 850 mV @ 1 A
SR320HA0G

SR320HA0G

DIODE SCHOTTKY 200V 3A DO201AD

Taiwan Semiconductor Corporation

10,465 0.00
- +

RFQ

SR320HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
S1ALHMHG

S1ALHMHG

DIODE GEN PURP 50V 1A SUB SMA

Taiwan Semiconductor Corporation

10,626 0.00
- +

RFQ

S1ALHMHG

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 50 V 50 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF2L4GHB0G

SF2L4GHB0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

11,734 0.00
- +

RFQ

SF2L4GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 1 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
MUR8L60 C0G

MUR8L60 C0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

11,793 0.00
- +

RFQ

MUR8L60 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 65 ns 5 µA @ 600 V 600 V 8A -55°C ~ 175°C 1.3 V @ 8 A
SS26L M2G

SS26L M2G

DIODE SCHOTTKY 60V 2A SUB SMA

Taiwan Semiconductor Corporation

13,763 0.00
- +

RFQ

SS26L M2G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 60 V 60 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR109HA0G

SR109HA0G

DIODE SCHOTTKY 90V 1A DO204AL

Taiwan Semiconductor Corporation

13,437 0.00
- +

RFQ

SR109HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 1A -55°C ~ 150°C 850 mV @ 1 A
SR502 A0G

SR502 A0G

DIODE SCHOTTKY 20V 5A DO201AD

Taiwan Semiconductor Corporation

10,895 0.00
- +

RFQ

SR502 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 5A -55°C ~ 125°C 550 mV @ 5 A
S1BB M4G

S1BB M4G

DIODE GEN PURP 100V 1A DO214AA

Taiwan Semiconductor Corporation

14,167 0.00
- +

RFQ

S1BB M4G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 12pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.1 V @ 1 A
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